Growth and properties of strained VOx thin films with controlled stoichiometry

Rata, A. D.; Chezan, A. R.; Haverkort, M. W.; Hsieh, H. H.; Lin, H.-J-; Chen, C. T.; Tjeng, L. H.; Hibma, T.

doi:10.1103/PhysRevB.69.075404

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Growth and properties of strained VO_x thin films with controlled stoichiometry

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Rata, A. D., Chezan, A. R., Haverkort, M. W., Hsieh, H. H., Lin, H.-J.-., Chen, C. T., et al. (2004). Growth and properties of strained VO_x thin films with controlled stoichiometry. Physical Review B, 69(7): 075404, pp. 1-11. doi:10.1103/PhysRevB.69.075404.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-17AB-B

Abstract

We have succeeded in growing epitaxial films of rocksalt VOx on MgO(001) substrates. The oxygen content as a function of oxygen flux was determined using O-18(2)-Rutherford backscattering spectrometry and the vanadium valence using x-ray-absorption spectroscopy. The upper and lower stoichiometry limits found are similar to those known for bulk material (0.8<x<1.3). From the reflection high-energy electron diffraction oscillation period a large number of vacancies for both vanadium and oxygen were deduced, i.e., approximate to16% for stoichiometric VO. These numbers are, surprisingly, very similar to those for bulk material and consequently quite strain insensitive. X-ray-absorption spectroscopy measurements reveal that the vacancies give rise to strong non-cubic crystal field effects. The electrical conductivity of the films is much lower than the conductivity of bulk samples, which we attribute to a decrease in the direct overlap between t(2g) orbitals in the coherently strained layers. The temperature dependence of the conductivity is consistent with a variable range hopping mechanism.