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Crossing the Gap from p- to n-Type Doping: Nature of the States near the Chemical Potential in La2−xSrxCuO4 and Nd2−xCexCuO4−δ

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Zitation

Steeneken, P. G., Tjeng, L. H., Sawatzky, G. A., Tanaka, A., Tjernberg, O., Ghiringhelli, G., et al. (2003). Crossing the Gap from p- to n-Type Doping: Nature of the States near the Chemical Potential in La2−xSrxCuO4 and Nd2−xCexCuO4−δ. Physical Review Letters, 90(24): 247005, pp. 1-4. doi:10.1103/PhysRevLett.90.247005.


Zitierlink: http://hdl.handle.net/11858/00-001M-0000-0019-179F-7
Zusammenfassung
We report on an x-ray absorption and resonant photoemission study on single crystals of the high-T-c cuprates La2-xSrxCuO4 and Nd2-xCexCuO4-delta. Using an intrinsic energy reference, we find that the chemical potential of La2-xSrxCuO4 lies near the top of the La2CuO4 valence band whereas in Nd2-xCexCuO4-delta it is situated near the bottom of the Nd2CuO4 conduction band. The data clearly establish that the introduction of Ce in Nd2CuO4 results in electrons being doped into the CuO2 planes. We infer that the states closest to the chemical potential have a Cu 3d(10) singlet origin in Nd2-xCexCuO4-delta and a 3d(9) (L) under bar singlet origin in La2-xSrxCuO4.