English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Strongly reduced band gap in a correlated insulator in close proximity to a metal

MPS-Authors
There are no MPG-Authors available
Locator
There are no locators available
Fulltext (public)
There are no public fulltexts available
Supplementary Material (public)
There is no public supplementary material available
Citation

Hesper, R., Tjeng, L. H., & Sawatzky, G. A. (1997). Strongly reduced band gap in a correlated insulator in close proximity to a metal. EPL, 40(2), 177-182. doi:10.1209/epl/i1997-00442-2.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-1DAC-0
Abstract
Using a combination of photoelectron and inverse photoelectron spectroscopy, we show that the band gap in a monolayer of C-60 on a Ag surface is strongly reduced from the solid C-60 surface value. We argue that this is a result of the reduction of the on-site molecular Coulomb interaction due to the influence of image charges in the metal substrate. This result suggests that the physical properties of correlated insulators and semiconductors will be strongly modified if prepared in ultra thin form on metal substrates or sandwiched between metal layers.