Changes in the electronic structure of Ti4O7 across the 
semiconductor–semiconductor-metal transitions

Abbate, M.; Potze, R.; Sawatzky, G. A.; Schlenker, C.; Lin, H. J.; Tjeng, L. H.; Chen, C. T.; Teehan, D.; Turner, T. S.

doi:10.1103/PhysRevB.51.10150

Datensatz

DATENSATZ AKTIONENEXPORT

Zur Ablage hinzufügen

Lokale TagsStatistikFreigabegeschichteDetailsÜbersicht

Freigegeben

Zeitschriftenartikel

Changes in the electronic structure of Ti₄O₇ across the semiconductor–semiconductor-metal transitions

MPG-Autoren

Es sind keine MPG-Autoren in der Publikation vorhanden

Externe Ressourcen

Es sind keine Externen Ressourcen verfügbar

Volltexte (frei zugänglich)

Es sind keine frei zugänglichen Volltexte verfügbar

Ergänzendes Material (frei zugänglich)

Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar

Zitation

Abbate, M., Potze, R., Sawatzky, G. A., Schlenker, C., Lin, H. J., Tjeng, L. H., et al. (1995). Changes in the electronic structure of Ti₄O₇ across the semiconductor–semiconductor-metal transitions. Physical Review B, 51(15), 10150-10153. doi:10.1103/PhysRevB.51.10150.

Zitierlink: http://hdl.handle.net/11858/00-001M-0000-0019-1900-C

Zusammenfassung

We present and discuss photoemission (PES) and O 1s x-ray-absorption spectra (XAS) of Ti4O7 taken at different temperatures in the range 50–300 K. The PES taken at 300 K show Ti 3d bands at the Fermi level and O 2p bands at higher binding energies. The Ti 3d bands shift approximately 0.25 eV towards higher binding energies in the low-temperature semiconducting phase (50 K). The O 1s XAS are related, via the corresponding metal-oxygen hybridization, to the unoccupied electronic states in the conduction band. The XAS taken at 300 K reflect Ti 3d bands at threshold and Ti 4sp bands at higher photon energies. The Ti 3d bands are split by crystal-field effects into t2g and eg subbands and shift approximately 0.45 eV towards higher photon energies in the low-temperature semiconducting phase (80 K). The XAS are basically temperature independent in both the low-temperature semiconducting phase and in the high-temperature metallic phase. The main changes in the O 1s XAS appear rather suddenly at the semiconductor-metal transition around 150 K.