Synchrotron radiation and low-energy electron-diffraction studies of ultrathin C
60 films deposited on Cu(100), Cu(111) and Cu(110)

Rowe, J. E.; Rudolf, P.; Tjeng, L. H.; Malic, R. A.; Meigs, G.; Chen, C. T.; Chen, J.; Plummer, E. W.

doi:10.1142/S0217979292001997

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Synchrotron radiation and low-energy electron-diffraction studies of ultrathin C₆₀ films deposited on Cu(100), Cu(111) and Cu(110)

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Rowe, J. E., Rudolf, P., Tjeng, L. H., Malic, R. A., Meigs, G., Chen, C. T., et al. (1992). Synchrotron radiation and low-energy electron-diffraction studies of ultrathin C₆₀ films deposited on Cu(100), Cu(111) and Cu(110). International Journal of Modern Physics B [Condensed Matter Physics; Statistical Physics; Applied Physics], 6(23-24), 3909-3913. doi:10.1142/S0217979292001997.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-1F2A-4

Abstract

High resolution K-edge photoemission and X-ray absorption spectroscopies have been used to study the chemical properties of the interface formed with C60 and Cu. We find that for very thin (0.24 - 1 monolayers) C60 films, deposited in ultrahigh vacuum, the Cu substrate plays a role similar to that of K in K3C60 films. Thus Cu donates charge to partially fill the pi* LUMO band, and the C (1s) core level shifts due to charge transfer. For monolayer coverage the C (1s) core-level line shape is broad. Low energy electron diffraction studies of C60 on Cu(100), Cu(111) and Cu(110) show that well ordered overlayers of thickness > 2 monolayers can be formed on all three Cu surfaces, but single-domain epitaxy is achieved only on Cu(111). The substrate temperature during C60 deposition is critical for the ordering of the film.