Relationship between atomic and electronic structure of clean and oxygen 
covered copper (110) surface

Tjeng, L. H.; Meinders, M. B. J.; Sawatzky, G. A.

doi:10.1016/0039-6028(90)90187-D

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Relationship between atomic and electronic structure of clean and oxygen covered copper (110) surface

MPS-Authors

There are no MPG-Authors in the publication available

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Tjeng, L. H., Meinders, M. B. J., & Sawatzky, G. A. (1990). Relationship between atomic and electronic structure of clean and oxygen covered copper (110) surface. Surface Science, 233(1-2), 163-183. doi:10.1016/0039-6028(90)90187-D.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-1EDA-D

Abstract

We described the electronic band-structure of the clean and oxygen covered Cu(110) surface using a tight-binding method in a recursive layer by layer scheme. These are compared to angle-resolved ultraviolet photoelectron and angle-resolved inverse photoemission data. Good agreement for all (except image potential) surface states for the clean surface is obtained and also for the oxygen covered surface if the “ buckled-row” reconstruction is assumed, where alternate 〈001〉 copper rows are displaced outwardly by 0.6± 0.2 Å from the first layer and the oxygen atoms are located 0.1 ± 0.2 Å below these copper atoms. From this we conclude that the room temperature Cu(110)-p2 × 1-O superstructure is the result of a “buckled-row” reconstruction. The possibility of a “missing-row” reconstruction for the high temperature Cu(110)-p2 × 1-O superstructure is discussed.