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Structural phase transition of GaTe at high pressure

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Schwarz, U., Syassen, K., & Kniep, R. (1995). Structural phase transition of GaTe at high pressure. Journal of Alloys and Compounds, 224(2), 212-216. doi:10.1016/0925-8388(95)01559-0.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-BA93-D
Abstract
We have investigated structural stability and electronic properties of the layered semiconductor GaTe under hydrostatic pressure by X-ray powder diffraction and optical reflectivity measurements in a diamond anvil cell. The monoclinic low-pressure modification undergoes a first-order phase transition at 10(1) GPa into a high-pressure polymorph of the NaCl type structure. Thermal annealing at 475 K and 12 GPa for 12 h turned out to be essential for obtaining well-crystallized samples of the high-pressure phase. The reconstructive structural change is accompanied by a semiconductor-to-metal transition. The cubic modification is metastable with decreasing pressures down to 3 GPa and transforms to an amorphous phase at lower pressures.