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Journal Article

CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors


Huang,  Xing
Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences;
Inorganic Chemistry, Fritz Haber Institute, Max Planck Society;

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Xia, J., Huang, X., Liu, L., Wang, M., Wang, L., Huang, B., et al. (2014). CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors. Nanoscale, 6(15), 8949-8955. doi:10.1039/C4NR02311K.

Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-C39C-E
Synthesis of large-area atomically thin transition metal dichalcogenides (TMDs) on diverse substrates is of central importance for large-scale fabrication of flexible devices and heterojunction-based devices. In this work, we successfully synthesized a large area of highly crystalline MoSe2 atomic layers on SiO2/Si, mica and Si substrates by using a simple atmospheric pressure chemical vapor deposition (CVD) method. Atomic Force Microscopy (AFM) and Raman spectroscopy reveal that the as-grown ultrathin MoSe2 layers change from a single layer to a few layers. Photoluminescence (PL) spectroscopy demonstrates that while the multi-layer MoSe2 shows weak emission peaks, the monolayer has a much stronger emission peak at ~ 1.56 eV, indicating the transition from an indirect to direct bandgap. Analysis based on transmission electron microscopy (TEM) confirms the single-crystallinity of MoSe2 layers with a hexagonal structure. In addition, photoresponse performance of photodetectors based on monolayer MoSe2 was studied for the first time. The devices exhibit a rapid response of ~ 60 ms and a good photoresponsivity of ~ 13 mA/W (a 532 nm laser with the intensity of 1 mW/mm2 and a 10 V bias), suggesting that the monolayer MoSe2 is a promising material for photodetection application.