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Luminescence Properties of Nitrogen-Doped ZnO

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Stavale,  Fernando
Chemical Physics, Fritz Haber Institute, Max Planck Society;
Centro Brasileiro de Pesquisas Físicas - CBPF/MCTI;

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Pascua,  Leandro
Chemical Physics, Fritz Haber Institute, Max Planck Society;

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Nilius,  Niklas
Chemical Physics, Fritz Haber Institute, Max Planck Society;
Institute of Physics, Carl von Ossietzky Universit;

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Freund,  Hans-Joachim
Chemical Physics, Fritz Haber Institute, Max Planck Society;

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Citation

Stavale, F., Pascua, L., Nilius, N., & Freund, H.-J. (2014). Luminescence Properties of Nitrogen-Doped ZnO. The Journal of Physical Chemistry C, 118(25), 13693-13696. doi:10.1021/jp5035536.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-D670-C
Abstract
Pure and nitrogen-doped ZnO films are prepared on a Au(111) single crystal and characterized by luminescence spectroscopy in a scanning tunneling microscope. In both cases, a 730 nm defect peak is revealed in addition to the band recombination peak at 373 nm. The intensity of the defect peak increases when growing the film at reducing conditions or inserting nitrogen into the oxide lattice. Our finding suggests that not the nitrogen impurities but O vacancies are responsible for the defect emission and that the nitrogen incorporation only facilitates the formation of O defects.