Antiferromagnetism and heavy-fermion effects in a semiconductor: Sm3Te4

Ahlheim, U.; Fraas, K.; Reinders, P. H. P.; Steglich, F.; Nakamura, O.; Suzuki, T.; Kasuya, T.

doi:10.1016/0304-8853(92)91416-Q

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Antiferromagnetism and heavy-fermion effects in a semiconductor: Sm₃Te₄

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Citation

Ahlheim, U., Fraas, K., Reinders, P. H. P., Steglich, F., Nakamura, O., Suzuki, T., et al. (1992). Antiferromagnetism and heavy-fermion effects in a semiconductor: Sm₃Te₄. Journal of Magnetism and Magnetic Materials, 108(1-3), 213-214. doi:10.1016/0304-8853(92)91416-Q.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-D70A-C

Abstract

Specific heat measurements were carried out down to 80 mK in magnetic fields up to 8 T on Sm3Te4. Two sharp antiferromagnetic phase transitions were observed at 0.7 and 0.9 K. At 1.4 K, the specific heat shows a broad peak which can be fitted by the impurity Kondo model for S = 1/2. Heavy-fermion character at low temperature was established with a large gamma-value, 0.6 J/K2 mol Sm3+.