Pressure-Dependent Relaxation in the Photoexcited Mott Insulator ET-F2 TCNQ: 
Influence of Hopping and Correlations on Quasiparticle Recombination Rates

Mitrano, Matteo; Cotugno, Giovanni; Clark, S. R.; Singla, Rashmi; Kaiser, Stefan; Stähler, Julia; Beyer, R.; Dressel, M.; Baldassarre, L.; Nicoletti, Daniele; Perucchi, A.; Hasegawa, T.; Okamoto, H.; Jaksch, D.; Cavalleri, Andrea

doi:10.1103/PhysRevLett.112.117801

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Pressure-Dependent Relaxation in the Photoexcited Mott Insulator ET-F₂ TCNQ: Influence of Hopping and Correlations on Quasiparticle Recombination Rates

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Mitrano, Matteo
Quantum Condensed Matter Dynamics, Condensed Matter Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;

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Cotugno, Giovanni
Quantum Condensed Matter Dynamics, Condensed Matter Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Department of Physics, Oxford University, Clarendon Laboratory;

/persons/resource/persons133785

Singla, Rashmi
Quantum Condensed Matter Dynamics, Condensed Matter Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;

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Kaiser, Stefan
Quantum Condensed Matter Dynamics, Condensed Matter Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;

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Stähler, Julia
Fritz Haber Institute of the Max Planck Society;

/persons/resource/persons133789

Nicoletti, Daniele
Quantum Condensed Matter Dynamics, Condensed Matter Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;

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Cavalleri, Andrea
Quantum Condensed Matter Dynamics, Condensed Matter Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Department of Physics, Oxford University, Clarendon Laboratory;

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http://dx.doi.org/10.1103/PhysRevLett.112.117801
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http://arxiv.org/abs/1308.2189
(Postprint)

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1308.2189.pdf
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Supplementary Material (public)

Et_under_pressure_PRL_supplementary.pdf
(Supplementary material), 6MB

Citation

Mitrano, M., Cotugno, G., Clark, S. R., Singla, R., Kaiser, S., Stähler, J., et al. (2014). Pressure-Dependent Relaxation in the Photoexcited Mott Insulator ET-F₂ TCNQ: Influence of Hopping and Correlations on Quasiparticle Recombination Rates. Physical Review Letters, 112(11): 117801. doi:10.1103/PhysRevLett.112.117801.

Cite as: https://hdl.handle.net/11858/00-001M-0000-001A-337C-E

Abstract

We measure the ultrafast recombination of photoexcited quasiparticles (holon-doublon pairs) in the one dimensional Mott insulator ET-F₂ TCNQ as a function of external pressure, which is used to tune the electronic structure. At each pressure value, we first fit the static optical properties and extract the electronic bandwidth t and the intersite correlation energy V. We then measure the recombination times as a function of pressure, and we correlate them with the corresponding microscopic parameters. We find that the recombination times scale differently than for metals and semiconductors. A fit to our data based on the time-dependent extended Hubbard Hamiltonian suggests that the competition between local recombination and delocalization of the Mott-Hubbard exciton dictates the efficiency of the recombination.