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Investigation of the Mn3-δ Ga/MgO interface for magnetic tunneling junctions

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ViolBarbosa,  C. E.
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Ouardi,  S.
Siham Ouardi, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Fecher,  G. H.
Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser,  C.
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

ViolBarbosa, C. E., Ouardi, S., Kubota, T., Mizukami, S., Fecher, G. H., Miyazaki, T., et al. (2014). Investigation of the Mn3-δ Ga/MgO interface for magnetic tunneling junctions. Journal of Applied Physics, 116(3): 034508, pp. 1-4. doi:10.1063/1.4890582.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0023-CE7A-D
Abstract
The Mn3Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque magnetoresistive memories. Mn-Ga films exhibits perpendicular magnetic anisotropy and high spin polarization and can be used to improve the performance of MgO-based magneto tunneling junctions. The interface between Mn-Ga and MgO films were chemically characterized by hard x-ray photoelectron spectroscopy. The experiment indicated the formation of Ga-O bonds at the interface and evidenced changes in the local environment of Mn atoms in the proximity of the MgO film. We show that the deposition of few monoatomic layers of Mg on top of Mn-Ga film, before the MgO deposition, strongly suppresses the oxidation of gallium. (C) 2014 AIP Publishing LLC.