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Intergrowth structure of alpha-phase in beta-type TmAlB4 compound studied by high-angle annular detector dark-field scanning transmission electron microscopy

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Leithe-Jasper,  Andreas
Andreas Leithe-Jasper, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Borrmann,  Horst
Horst Borrmann, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Grin,  Yuri
Juri Grin, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Yubuta, K., Mori, T., Leithe-Jasper, A., Borrmann, H., Grin, Y., Okada, S., et al. (2014). Intergrowth structure of alpha-phase in beta-type TmAlB4 compound studied by high-angle annular detector dark-field scanning transmission electron microscopy. Journal of Solid State Chemistry, 219, 274-279. doi:10.1016/j.jssc.2014.07.038.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0024-2494-6
Abstract
Nanostructure of a ThMoB4-type (beta-type) TmAlB4 compound, in which YCrB(4)type (alpha-type) domains are locally intergrown, is studied by high-angle annular detector dark-field scanning transmission electron microscopy (HAADF-STEM). Z-contrast images by HAADF-STEM directly represent the arrangements of Tm atoms located at centers of heptagonal atomic columns of B atoms as bright dots, and give us detailed information of intergrowth of type domains in the matrix of the beta-type phase, which coherently occurs. Structural and bonding analyses for beta-TmAlB4 point out the closeness in atomic interactions and energy of the alpha- and beta-type structures which support the easy formation of such nanostructure intergrowths. From combination between HAADF-STEM and electronic structure calculation, a detailed local crystal structure with intrinsic building defects is effectively revealed. (C) 2014 Elsevier Inc. All rights reserved.