High-Performance ZnO Nanowire Transistors with Aluminium Top-Gate Electrodes 
and Naturally Formed Hybrid Self-Assembled Monolayer/AlOx Gate Dielectric

Kaelblein, Daniel; Ryu, Hyeyeon; Ante, Frederik; Fenk, Bernhard; Hahn, Kersten; Kern, Klaus; Klauk, Hagen

doi:10.1021/nn501484e

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High-Performance ZnO Nanowire Transistors with Aluminium Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlO<Sub>x</Sub> Gate Dielectric

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Hahn, Kersten
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Kaelblein, D., Ryu, H., Ante, F., Fenk, B., Hahn, K., Kern, K., et al. (2014). High-Performance ZnO Nanowire Transistors with Aluminium Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlO_x Gate Dielectric. ACS Nano, 8, 6840-6848. doi:10.1021/nn501484e.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0024-3BD3-5

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