Ordering phenomena and formation of nanostructures in InxGa1−xN layers 
coherently grown on GaN(0001)

Lee, Sangheon; Freysoldt, Christoph; Neugebauer, Jörg

doi:10.1103/PhysRevB.90.245301

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Ordering phenomena and formation of nanostructures in In_xGa_1−xN layers coherently grown on GaN(0001)

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Lee, Sangheon
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Freysoldt, Christoph
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, Jörg
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Lee, S., Freysoldt, C., & Neugebauer, J. (2014). Ordering phenomena and formation of nanostructures in In_xGa_1−xN layers coherently grown on GaN(0001). Physical Review B, 90(24): 245301. doi:10.1103/PhysRevB.90.245301.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0024-5B75-6

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