English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Ordering phenomena and formation of nanostructures in InxGa1−xN layers coherently grown on GaN(0001)

MPS-Authors
/persons/resource/persons125244

Lee,  Sangheon
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons125143

Freysoldt,  Christoph
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons125293

Neugebauer,  Jörg
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

External Ressource
No external resources are shared
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Lee, S., Freysoldt, C., & Neugebauer, J. (2014). Ordering phenomena and formation of nanostructures in InxGa1−xN layers coherently grown on GaN(0001). Physical Review B, 90(24): 245301. doi:10.1103/PhysRevB.90.245301.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0024-5B75-6
Abstract
There is no abstract available