Interface structure and chemistry of GaN on Ge(111)

Zhang, Siyuan; Zhang, Yucheng; Cui, Ying; Freysoldt, Christoph; Neugebauer, Jörg; Lieten, Ruben R.; Barnard, Jonathan S.; Humphreys, Colin J.

doi:10.1103/PhysRevLett.111.256101

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Interface structure and chemistry of GaN on Ge(111)

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Cui, Ying
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Freysoldt, Christoph
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, Jörg
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Zhang, S., Zhang, Y., Cui, Y., Freysoldt, C., Neugebauer, J., Lieten, R. R., et al. (2013). Interface structure and chemistry of GaN on Ge(111). Physical Review Letters, 111(25): 256101. doi:10.1103/PhysRevLett.111.256101.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0024-A134-D

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