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Journal Article

Resonant charge relaxation as a likely source of the enhanced thermopower in FeSi


Steglich,  Frank
Frank Steglich, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Sun, P., Wei, B., Menzel, D., & Steglich, F. (2014). Resonant charge relaxation as a likely source of the enhanced thermopower in FeSi. Physical Review B, 90(24): 245146, pp. 1-5. doi:10.1103/PhysRevB.90.245146.

Cite as: http://hdl.handle.net/11858/00-001M-0000-0024-BFD1-B
The enhanced thermopower of the correlated semiconductor FeSi is found to be robust against the sign of the relevant charge carriers. At T approximate to 70 K, the position of both the high-temperature shoulder of the thermopower peak and the nonmagnetic-enhanced paramagnetic crossover, the Nernst coefficient. assumes a large maximum and the Hall mobility mu(H) diminishes to below 1 cm(2)/V s. These cause the dimensionless ratio nu/mu(H) -a measure of the energy dispersion of the charge scattering time tau (epsilon)-to exceed that of classical metals and semiconductors by two orders of magnitude. Concomitantly, the resistivity exhibits a hump and the magnetoresistance changes its sign. Our observations hint at a resonant scattering of the charge carriers at the magnetic crossover, imposing strong constraints on the microscopic interpretation of the robust thermopower enhancement in FeSi.