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CVD of silicon and silicides on iron

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Citation

Rebhan, M. E., Rohwerder, M., & Stratmann, M. (1999). CVD of silicon and silicides on iron. Applied Surface Science, 140(1-2), 99-105. doi:10.1016/S0169-4332(98)00500-5.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0025-1A5F-3
Abstract
Silicon and iron silicides are promising candidates as adhesion promoters on iron. The formation of silicon and iron silicides films on polycrystalline iron is studied in a CVD process with monosilane. The process is performed between 475°C and 800°C with a silane partial pressure of 0.2 to 10 mbar to a total pressure of the silane-hydrogen mixture of 100 to 990 mbar. A model of the reaction mechanism is presented which includes the transport of the gases, the adsorption on the surface, the chemical decomposition of the silane and the interdiffusion between Si and Fe.