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Influence of deposition temperature and bias voltage on the crystalline phase of Er2O3 thin films deposited by filtered cathodic arc

MPS-Authors
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Adelhelm,  C.
Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society;
Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society;

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Pickert,  T.
Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society;

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Koch,  F.
Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society;
Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society;

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Balden,  M.       
Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society;
Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society;

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Jahn,  S.
Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society;

Maier,  H.
Max Planck Society;

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Adelhelm, C., Pickert, T., Koch, F., Balden, M., Jahn, S., Rinke, M., et al. (2011). Influence of deposition temperature and bias voltage on the crystalline phase of Er2O3 thin films deposited by filtered cathodic arc. Journal of Nuclear Materials, 417(1-3), 798-801. doi:10.1016/j.jnucmat.2010.12.163.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0026-E899-1
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