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Influence of deposition temperature and bias voltage on the crystalline phase of Er2O3 thin films deposited by filtered cathodic arc

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Adelhelm,  C.
Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society;
Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society;

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Pickert,  T.
Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society;

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Koch,  F.
Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society;
Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society;

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Balden,  M.
Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society;
Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society;

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Jahn,  S.
Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society;

Maier,  H.
Max Planck Society;

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Citation

Adelhelm, C., Pickert, T., Koch, F., Balden, M., Jahn, S., Rinke, M., et al. (2011). Influence of deposition temperature and bias voltage on the crystalline phase of Er2O3 thin films deposited by filtered cathodic arc. Journal of Nuclear Materials, 417(1-3), 798-801. doi:10.1016/j.jnucmat.2010.12.163.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0026-E899-1
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