Layer Morphology Analysis of Sputter-eroded Silicon Gratings using Rutherford 
Backscattering

Langhuth, H.; Mayer, M.; Lindig, S.

doi:10.1016/j.nimb.2011.05.002

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Layer Morphology Analysis of Sputter-eroded Silicon Gratings using Rutherford Backscattering

MPS-Authors

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Langhuth, H.
Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society;
Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society;

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Mayer, M.
Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society;
Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society;

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Lindig, S.
Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society;
Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society;

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Langhuth_Layer.pdf
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引用

Langhuth, H., Mayer, M., & Lindig, S. (2011). Layer Morphology Analysis of Sputter-eroded Silicon Gratings using Rutherford Backscattering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 269(16), 1811-1817. doi:10.1016/j.nimb.2011.05.002.

引用: https://hdl.handle.net/11858/00-001M-0000-0026-EAC7-7

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