Ion fluence dependence of the Si sputtering yield by noble gas ion bombardment

Mutzke, A.; Eckstein, W.

doi:10.1016/j.nimb.2008.01.053

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Ion fluence dependence of the Si sputtering yield by noble gas ion bombardment

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Mutzke, A.
Stellarator Theory (ST), Max Planck Institute for Plasma Physics, Max Planck Society;

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Eckstein, W.
Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society;

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Mutzke, A., & Eckstein, W. (2008). Ion fluence dependence of the Si sputtering yield by noble gas ion bombardment. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 266(6), 872-876. doi:10.1016/j.nimb.2008.01.053.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0026-FF2F-5

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