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Journal Article

Modeling of altered layer formation during reactive ion etching of GaAs

MPS-Authors
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Mutzke,  A.
Stellarator Theory (ST), Max Planck Institute for Plasma Physics, Max Planck Society;

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Rai,  A.
Stellarator Theory (ST), Max Planck Institute for Plasma Physics, Max Planck Society;

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Mutzke_Modeling.pdf
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Citation

Mutzke, A., Rai, A., Schneider, R., Angelin, E., & Hippler, R. (2012). Modeling of altered layer formation during reactive ion etching of GaAs. Applied Surface Science, 263, 626-632. doi:10.1016/j.apsusc.2012.09.123.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0026-E60F-7
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