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Linear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd3As2

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Yan,  B.
Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser,  C.
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Narayanan, A., Watson, M. D., Blake, S. F., Bruyant, N., Drigo, L., Chen, Y. L., et al. (2015). Linear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd3As2. Physical Review Letters, 114(11): 117201, pp. 1-5. doi:10.1103/PhysRevLett.114.117201.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0026-BE15-F
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