Direct insertion of SiH3 radicals into strained Si-Si surface bonds during 
plasma deposition of hydrogenated amorphous silicon films

Keudell, A. von; Abelson, J. R.

doi:10.1103/PhysRevB.59.5791

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Direct insertion of SiH₃ radicals into strained Si-Si surface bonds during plasma deposition of hydrogenated amorphous silicon films

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Keudell, A. von
Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society;

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Keudell, A. v., & Abelson, J. R. (1999). Direct insertion of SiH₃ radicals into strained Si-Si surface bonds during plasma deposition of hydrogenated amorphous silicon films. Physical Review B, 59(8), 5791-5798. doi:10.1103/PhysRevB.59.5791.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0027-85EF-1

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