Interface formation in silicon by cesium bombardment

Mashkova, E. S.; Molchanov, V. A.; Shulga, V. I.; Benazeth, C.; Benazeth, N.; Cafarelli, P.; Eckstein, W.; Hou, M.

doi:10.1016/0168-583X(95)01549-3

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Interface formation in silicon by cesium bombardment

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Eckstein, W.
Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society;

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Mashkova, E. S., Molchanov, V. A., Shulga, V. I., Benazeth, C., Benazeth, N., Cafarelli, P., et al. (1996). Interface formation in silicon by cesium bombardment. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 115(1-4), 519-522. doi:10.1016/0168-583X(95)01549-3.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0027-8D1E-2

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