English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
Add to Basket
  Local TagsRelease HistoryDetailsSummary

Released
Talk

Temperature induced faceted hole formation in epitaxial Al thin films on sapphire

MPS-Authors
/persons/resource/persons136321

Hieke,  Stefan Werner
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;
Advanced Transmission Electron Microscopy, Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons75388

Dehm,  Gerhard
Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons76047

Scheu,  Christina
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Hieke, S. W., Dehm, G., & Scheu, C. (2015). Temperature induced faceted hole formation in epitaxial Al thin films on sapphire. Talk presented at Understanding Grain Boundary Migration: Theory Meets Experiment. Günzburg/Donau, Germany. 2015-06-21 - 2015-06-24.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0027-C3AC-A
Abstract
There is no abstract available