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Temperature induced faceted hole formation in epitaxial Al thin films on sapphire

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Hieke,  Stefan Werner
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;
Advanced Transmission Electron Microscopy, Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Dehm,  Gerhard
Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons76047

Scheu,  Christina
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Hieke, S. W., Dehm, G., & Scheu, C. (2015). Temperature induced faceted hole formation in epitaxial Al thin films on sapphire. Talk presented at Understanding Grain Boundary Migration: Theory Meets Experiment. Günzburg/Donau, Germany. 2015-06-21 - 2015-06-24.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0027-C3AC-A
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