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Journal Article

Photoinduced States in a Mott Insulator

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Fulltext (public)

PhysRevLett.110.126401.pdf
(Publisher version), 577KB

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Citation

Eckstein, M., & Werner, P. (2013). Photoinduced States in a Mott Insulator. Physical Review Letters, 110(12): 126401. doi:10.1103/PhysRevLett.110.126401.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0028-163B-8
Abstract
We investigate the properties of the metallic state obtained by photodoping carriers into a Mott insulator. In a strongly interacting system, these carriers have a long lifetime, so that they can dissipate their kinetic energy to a phonon bath. In the relaxed state, the scattering rate saturates at a nonzero temperature-independent value, and the momentum-resolved spectral function features broad bands which differ from the well-defined quasiparticle bands of a chemically doped system. Our results indicate that a photodoped Mott insulator behaves as a bad metal, in which strong scattering between doublons and holes inhibits Fermi-liquid behavior down to low temperature.