Hot electron injection driven phase transitions

Hada, Masaki; Zhang, Dongfang; Casandruc, Albert; Miller, R. J. Dwayne; Hontani, Yusaku; Matsuo, Jiro; Marvel, Robert E.; Haglund, Jr., Richard F.

doi:10.1103/PhysRevB.86.134101

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Hot electron injection driven phase transitions

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http://dx.doi.org/10.1103/PhysRevB.86.134101
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PhysRevB.86.134101.pdf
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Citation

Hada, M., Zhang, D., Casandruc, A., Miller, R. J. D., Hontani, Y., Matsuo, J., et al. (2012). Hot electron injection driven phase transitions. Physical Review B, 86(13): 134101. doi:10.1103/PhysRevB.86.134101.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0028-18D5-2

Abstract

We report on a general mechanism for photo-induced phase transitions. The process relies on the photo-injection of hot electrons from an adjacent metallic layer to trigger the structural dynamics of the materials of interest. This mechanism is demonstrated for the semiconductor-to-metal phase transition of VO₂ using a 20 nm Au injection layer. The nature of the phase transition is demonstrated by time-resolved optical transmission measurements, as well as a well defined bias dependence that illustrates that the Au film is the source of nonequilibrium electrons driving the phase transition.