Ultrafast THz saturable absorption in doped semiconductors

Turchinovich, Dmitry; Hoffmann, Matthias C.

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Ultrafast THz saturable absorption in doped semiconductors

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http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5950913
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Turchinovich, D., & Hoffmann, M. C. (2011). Ultrafast THz saturable absorption in doped semiconductors. In 2011 Conference on Lasers and Electro-Optics (CLEO). IEEE.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0028-27BC-3

Abstract

We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.