Oxygen adsorbed In/Si(111)-(4x1)/(8x2): surface transport and and 
impurity-mediated early condensation of an atomic layer electronic crystal

Wippermann, Stefan Martin; Edler, Frederik; Miccoli, Ilio; Demuth, S.; Pfnür, Herbert E.; Lücke, Andreas; Oh, Deok Mahn; Yeom, Han Woong; Schmidt, Wolf Gero; Tegenkamp, C.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Poster

Oxygen adsorbed In/Si(111)-(4x1)/(8x2): surface transport and and impurity-mediated early condensation of an atomic layer electronic crystal

MPS-Authors

/persons/resource/persons125477

Wippermann, Stefan Martin
Atomistic Modelling, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Wippermann, S. M., Edler, F., Miccoli, I., Demuth, S., Pfnür, H. E., Lücke, A., et al. (2015). Oxygen adsorbed In/Si(111)-(4x1)/(8x2): surface transport and and impurity-mediated early condensation of an atomic layer electronic crystal. Poster presented at PSI-K 2015 Conference, San Sebastian, Spain.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0028-4CB1-B

Abstract

There is no abstract available