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Interwire coupling for In(4 x 1)/Si(111) probed by surface transport

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Wippermann,  Stefan Martin
Atomistic Modelling, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Citation

Edler, F., Miccoli, I., Demuth, S., Pfnür, H. E., Wippermann, S. M., Lücke, A., et al. (2015). Interwire coupling for In(4 x 1)/Si(111) probed by surface transport. Physical Review B, 92(8): 085426. doi:10.1103/PhysRevB.92.085426.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0028-4CFB-7
Abstract
The In/Si(111) system reveals an anisotropy in the electrical conductivity and is a prototype system for atomic wires on surfaces. We use this system to study and tune the interwire interaction by adsorption of oxygen. Through rotational square four-tip transport measurements, both the parallel (sigma(parallel to)) and perpendicular (sigma(perpendicular to)) components are measured separately. The analysis of the I(V) curves reveals that sigma(perpendicular to) is also affected by adsorption of oxygen, showing clearly an effective interwire coupling, in agreement with density-functional-theory-based calculations of the transmittance. In addition to these surface-state mediated transport channels, we confirm the existence of conducting parasitic space-charge layer channels and address the importance of substrate steps by performing the transport measurements of In phases grown on Si(111) mesa structures.