Improvement of Crystalline Quality of Epitaxial Si Layers by Ion-Implantation 
Techniques

Lau, S.S.; Roth, J.; et al.,

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Improvement of Crystalline Quality of Epitaxial Si Layers by Ion-Implantation Techniques

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Roth, J.
Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society;

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Lau, S., Roth, J., & et al. (1979). Improvement of Crystalline Quality of Epitaxial Si Layers by Ion-Implantation Techniques. Applied Physics Letters, 34, 1, 76-78.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0028-BAC3-1

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