The Influence of Noble Gas Atoms on the Epitaxial Growth of Implanted and 
Sputtered Amorphous Silicon

Wittmer, M.; Roth, J.; Mayer, J.W.

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The Influence of Noble Gas Atoms on the Epitaxial Growth of Implanted and Sputtered Amorphous Silicon

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Roth, J.
Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society;

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Wittmer, M., Roth, J., & Mayer, J. (1979). The Influence of Noble Gas Atoms on the Epitaxial Growth of Implanted and Sputtered Amorphous Silicon. Journal of Electrochemical Society, 126, 7, 1247-1252.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0028-BACF-9

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