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Book Chapter

The Influence of Noble Gas Atoms on the Epitaxial Growth of Implanted and Sputtered Amorphous Silicon

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Roth,  J.
Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society;

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Citation

Wittmer, M., Baglin, E., Roth, J., & Mayer, J. (1978). The Influence of Noble Gas Atoms on the Epitaxial Growth of Implanted and Sputtered Amorphous Silicon. In Thin Films Phenomena - Interfaces and Interactions (pp. 107-126).


Cite as: http://hdl.handle.net/11858/00-001M-0000-0028-BC2D-0
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