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Graphene-Based Topological Insulator with an Intrinsic Bulk Band Gap above Room Temperature

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Yan,  B. H.
Max Planck Institute for the Physics of Complex Systems, Max Planck Society;

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Kou, L. Z., Yan, B. H., Hu, F. M., Wu, S. C., Wehling, T. O., Felser, C., et al. (2013). Graphene-Based Topological Insulator with an Intrinsic Bulk Band Gap above Room Temperature. Nano Letters, 13(12), 6251-6255. doi:10.1021/nl4037214.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0029-84B0-7
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