Electron transport and Goos-Hanchen shift in graphene with electric and 
magnetic barriers: optical analogy and band structure

Sharma, M.; Ghosh, S.

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Electron transport and Goos-Hanchen shift in graphene with electric and magnetic barriers: optical analogy and band structure

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Ghosh, S.
Max Planck Institute for the Physics of Complex Systems, Max Planck Society;

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Sharma, M., & Ghosh, S. (2011). Electron transport and Goos-Hanchen shift in graphene with electric and magnetic barriers: optical analogy and band structure. Journal of Physics-Condensed Matter, 23(5): 055501.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0029-8DB1-E

Abstract

Transport of massless Dirac fermions in graphene monolayers is analysed in the presence of a combination of singular magnetic barriers and applied electrostatic potential. Extending a recently proposed (Ghosh and Sharma 2009 J. Phys.: Condens. Matter 21 292204) analogy between the transmission of light through a medium with modulated refractive index and electron transmission in graphene through singular magnetic barriers to the present case, we find the addition of a scalar potential profoundly changes the transmission. We calculate the quantum version of the Goos-Hanchen shift that the electron wave suffers upon being totally reflected by such barriers. The combined electric and magnetic barriers substantially modify the band structure near the Dirac point. This affects transport near the Dirac point significantly and has important consequences for graphene-based electronics.