Efficient gating of epitaxial boron nitride monolayers by substrate 
functionalization

Fedorov, A.; Praveen, C. S.; Verbitskiy, N. I.; Haberer, D.; Usachov, D.; Vyalikh, D. V.; Nefedov, A.; Wöll, C.; Petaccia, L.; Piccinin, S.; Sachdev, Hermann; Knupfer, M.; Büchner, B.; Fabris, S.; Grüneis, A.

doi:10.1103/PhysRevB.92.125440

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Efficient gating of epitaxial boron nitride monolayers by substrate functionalization

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Sachdev, Hermann
Dept. Müllen: Synthetic Chemistry, MPI for Polymer Research, Max Planck Society;

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Fedorov, A., Praveen, C. S., Verbitskiy, N. I., Haberer, D., Usachov, D., Vyalikh, D. V., et al. (2015). Efficient gating of epitaxial boron nitride monolayers by substrate functionalization. Physical Review B, 92(12): 125440. doi:10.1103/PhysRevB.92.125440.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0028-D63A-6

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