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Cs-Doped Mo as Surface Converter for H-/D- Generation in Negative Ion Sources: First Steps and Proof of Principle

MPS-Authors
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Schiesko,  L.
ITER Technology & Diagnostics (ITED), Max Planck Institute for Plasma Physics, Max Planck Society;

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Hopf,  C.
ITER Technology & Diagnostics (ITED), Max Planck Institute for Plasma Physics, Max Planck Society;

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Höschen,  T.
Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society;

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Meisl,  G.
Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society;

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Encke,  O.
Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society;

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Franzen,  P.
ITER Technology & Diagnostics (ITED), Max Planck Institute for Plasma Physics, Max Planck Society;

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Heinemann,  B.
ITER Technology & Diagnostics (ITED), Max Planck Institute for Plasma Physics, Max Planck Society;

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Hopf,  C.
ITER Technology & Diagnostics (ITED), Max Planck Institute for Plasma Physics, Max Planck Society;

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Fantz,  U.
ITER Technology & Diagnostics (ITED), Max Planck Institute for Plasma Physics, Max Planck Society;

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Citation

Schiesko, L., Cartry, G., Hopf, C., Höschen, T., Meisl, G., Encke, O., et al. (2015). Cs-Doped Mo as Surface Converter for H-/D- Generation in Negative Ion Sources: First Steps and Proof of Principle. AIP Conference Proceedings, 1655: 020003. doi:10.1063/1.4916412.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0028-FBA1-5
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