Impurity-mediated early condensation of an atomic layer electronic crystal: 
oxygen-adsorbed In/Si(111)-(4×1)/(8×2)

Wippermann, Stefan Martin; Schmidt, Wolf Gero; Oh, Deok Mahn; Yeom, Han Woong

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Impurity-mediated early condensation of an atomic layer electronic crystal: oxygen-adsorbed In/Si(111)-(4×1)/(8×2)

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Wippermann, Stefan Martin
Atomistic Modelling, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Wippermann, S. M., Schmidt, W. G., Oh, D. M., & Yeom, H. W. (2015). Impurity-mediated early condensation of an atomic layer electronic crystal: oxygen-adsorbed In/Si(111)-(4×1)/(8×2). Talk presented at DPG Spring Meeting 2015. Berlin, Germany. 2015-03-15 - 2015-03-20.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0029-7DF0-3

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