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Time-resolved photoluminescence of type-I and type-II (GaIn)As ∕ Ga(NAs) heterostructures

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Hantke,  Kristian
Group Nonlinear laser spectroscopy, Department of Dynamics of Complex Fluids, Max Planck Institute for Dynamics and Self-Organization, Max Planck Society;

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Citation

Hantke, K., Heber, J. D., Schlichenmaier, C., Thränhardt, A., Meier, T., Kunert, B., et al. (2005). Time-resolved photoluminescence of type-I and type-II (GaIn)As ∕ Ga(NAs) heterostructures. Physical Review B, 71(16): 165320. doi:10.1103/PhysRevB.71.165320.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0029-B5B9-0
Abstract
A set of (Ga0.77In0.23)As/Ga(NxAs1−x) heterostructures is studied by time-resolved photoluminescence. Four samples with nitrogen concentrations from x=0.48% up to x=2.2% are investigated at different temperatures and with different excitation densities. The experiments suggest that the heterostructure band offset is type I for x=0.48% and type II for x=2.2%. The situation is more complex for x=0.72% and x=1.25%, since these samples are close to the transition from type I to type II. The experimental findings are analyzed using a detailed microscopic theory. Numerical calculations describe the measured data well. In particular, the interpretation of the experimental results concerning the band alignment is confirmed by the theoretical analysis.