English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
Add to Basket
  Local TagsRelease HistoryDetailsSummary

Released
Journal Article

Time-resolved photoluminescence of type-I and type-II (GaIn)As ∕ Ga(NAs) heterostructures

MPS-Authors
/persons/resource/persons173530

Hantke,  Kristian
Group Nonlinear laser spectroscopy, Department of Dynamics of Complex Fluids, Max Planck Institute for Dynamics and Self-Organization, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Hantke, K., Heber, J. D., Schlichenmaier, C., Thränhardt, A., Meier, T., Kunert, B., et al. (2005). Time-resolved photoluminescence of type-I and type-II (GaIn)As ∕ Ga(NAs) heterostructures. Physical Review B, 71(16): 165320. doi:10.1103/PhysRevB.71.165320.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0029-B5B9-0
Abstract
A set of (Ga0.77In0.23)As/Ga(NxAs1−x) heterostructures is studied by time-resolved photoluminescence. Four samples with nitrogen concentrations from x=0.48% up to x=2.2% are investigated at different temperatures and with different excitation densities. The experiments suggest that the heterostructure band offset is type I for x=0.48% and type II for x=2.2%. The situation is more complex for x=0.72% and x=1.25%, since these samples are close to the transition from type I to type II. The experimental findings are analyzed using a detailed microscopic theory. Numerical calculations describe the measured data well. In particular, the interpretation of the experimental results concerning the band alignment is confirmed by the theoretical analysis.