Spin-polarized transport in inhomogeneous magnetic semiconductors: Theory of 
magnetic/nonmagnetic p-n junctions

Zutic, I.; Fabian, J.; Das Sarma, S.

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Spin-polarized transport in inhomogeneous magnetic semiconductors: Theory of magnetic/nonmagnetic p-n junctions

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Fabian, J.
Max Planck Institute for the Physics of Complex Systems, Max Planck Society;

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Zutic, I., Fabian, J., & Das Sarma, S. (2002). Spin-polarized transport in inhomogeneous magnetic semiconductors: Theory of magnetic/nonmagnetic p-n junctions. Physical Review Letters, 88(6): 066603. 066603. Retrieved from http://ojps.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=PRLTAO000088000006066603000001&idtype=cvips&gifs=yes.

Cite as: https://hdl.handle.net/11858/00-001M-0000-002B-3812-E

Abstract

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spin-voltaic effect, spin valve effect, exponential and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.