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Type-I intermittency and crisis-induced intermittency in a semiconductor laser under injection current modulation

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Manffra,  E. F.
Max Planck Institute for the Physics of Complex Systems, Max Planck Society;

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Citation

Manffra, E. F., Caldas, I. L., Viana, R. L., & Kalinowski, H. J. (2002). Type-I intermittency and crisis-induced intermittency in a semiconductor laser under injection current modulation. Nonlinear Dynamics, 27(2), 185-195. Retrieved from http://ipsapp009.lwwonline.com/ips/frames/menu.asp?J=5053&S=40808&M=49568#.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002B-3856-5
Abstract
The dynamics of a negative gain suppression factor laser diode subjected to injection current modulation is similar to that of a damped nonlinear oscillator under periodic forcing. Quasi- periodicity, frequency locking and chaos may be present, depending on the values of the forcing parameters. We have found, for some parameter values, type-I intermittent behavior and crisis-induced intermittency. Scaling laws were obtained for the duration of the laminar phase and the chaos-chaos switchings, respectively. The scale exponents are very close to those expected for one-dimensional unimodal maps.