Deutsch
 
Benutzerhandbuch Datenschutzhinweis Impressum Kontakt
  DetailsucheBrowse

Datensatz

DATENSATZ AKTIONENEXPORT

Freigegeben

Zeitschriftenartikel

Pseudospin-valve effect on transport in junctions of three-dimensional topological insulator surfaces

MPG-Autoren
/persons/resource/persons145754

Roy,  Sthitadhi
Max Planck Institute for the Physics of Complex Systems, Max Planck Society;

/persons/resource/persons189383

Roychowdhury,  Krishanu
Max Planck Institute for the Physics of Complex Systems, Max Planck Society;

Volltexte (frei zugänglich)
Es sind keine frei zugänglichen Volltexte verfügbar
Ergänzendes Material (frei zugänglich)
Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar
Zitation

Roy, S., Roychowdhury, K., & Das, S. (2016). Pseudospin-valve effect on transport in junctions of three-dimensional topological insulator surfaces. New Journal of Physics, 18: 073038. doi:10.1088/1367-2630/18/7/073038.


Zitierlink: http://hdl.handle.net/11858/00-001M-0000-002B-A14F-C
Zusammenfassung
We show that the surface states of pristine 3D topological insulators (TIs) are analogs of ferromagnetic half metals due to complete polarization of an emergent momentum independent pseudospin (SU(2)) degree of freedom on the surface. To put this claim on firm footing, we present results for TI surfaces perpendicular to the crystal growth axis, which clearly show that the tunneling conductance between two such TI surfaces of the same TI material is dominated by this half metallic behavior leading to physics reminiscent of a spin-valve. Further using the generalized tunnel magnetoresistance derived in this work we also study the tunneling current between arbitrary TI surfaces. We also perform a comprehensive study of the effect of all possible surface potentials allowed by time reversal symmetry on this spin-valve effect and show that it is robust against most of such potentials.