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Impact of annealing on electrical properties of Cu2ZnSnSe4 absorber layers

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/persons/resource/persons125383

Schwarz,  Torsten
I. Physikalisches Institut IA, RWTH Aachen University, 52056 Aachen, Germany;
Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons181182

Spies,  Maria
Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;
Groupe de Physique des Matriaux, Université et INSA de Rouen, Normandie University, Rouen, France;

/persons/resource/persons125090

Cojocaru-Mirédin,  Oana
I. Physikalisches Institut IA, RWTH Aachen University, 52056 Aachen, Germany;
Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons125088

Choi,  Pyuck-Pa
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea;
Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Citation

Weiss, T. P., Redinger, A., Rey, G., Schwarz, T., Spies, M., Cojocaru-Mirédin, O., et al. (2016). Impact of annealing on electrical properties of Cu2ZnSnSe4 absorber layers. Journal of Applied Physics, 120: 045703. doi:10.1063/1.4959611.


Cite as: http://hdl.handle.net/11858/00-001M-0000-002B-B7CD-9
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