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Compensated Ferrimagnetic Tetragonal Heusler Thin Films for Antiferromagnetic Spintronics

MPS-Authors
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Sahoo,  Roshnee
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Wollmann,  Lukas
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Ernst,  Benedikt
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Kalache,  Adel
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Shekhar,  Chandra
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Kumar,  Nitesh
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Chadov,  Stanislav
Stanislav Chadov, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser,  Claudia
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Nayak,  Ajaya K.
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Sahoo, R., Wollmann, L., Selle, S., Hoeche, T., Ernst, B., Kalache, A., et al. (2016). Compensated Ferrimagnetic Tetragonal Heusler Thin Films for Antiferromagnetic Spintronics. Advanced Materials, 28(38), 8499-8504. doi:10.1002/adma.201602963.


Cite as: http://hdl.handle.net/11858/00-001M-0000-002B-BCF7-3
Abstract
Fully compensated ferrimagnets with tetragonal crystal structure have the potential for large spin-polarization and strong out-of-plane magnetic anisotropy; hence, they are ideal candidates for high-density-memory applications. Tetragonal Heusler thin films with compensated magnetic state are realized by substitution of Pt in Mn3-xPtxGa. Furthermore, the bilayer formed from compensated/uncompensated Mn-Pt-Ga layers is utilized to accomplish exchange bias up to room temperature.