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Journal Article

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

MPS-Authors
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Heilmann,  M.
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Latzel,  Michael
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Goebelt,  M.
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Christiansen,  Silke H.
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Kumar, A., Heilmann, M., Latzel, M., Kapoor, R., Sharma, I., Goebelt, M., et al. (2016). Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes. SCIENTIFIC REPORTS, 6: 27553. doi:10.1038/srep27553.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-62BB-6
Abstract
The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained.