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Extended hot carrier lifetimes observed in bulk In0.265 +/- 0.02Ga0.735N under high-density photoexcitation

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Heilmann,  Martin
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Zhang, Y., Tayebjee, M. J. Y., Smyth, S., Dvorak, M., Xiaoming, W., Hongze, X., et al. (2016). Extended hot carrier lifetimes observed in bulk In0.265 +/- 0.02Ga0.735N under high-density photoexcitation. APPLIED PHYSICS LETTERS, 108(13): 131904. doi:10.1063/1.4945594.


Cite as: http://hdl.handle.net/11858/00-001M-0000-002D-62F3-6
Abstract
We have investigated the ultrafast carrier dynamics in a 1 mu m bulk In0.265Ga0.735N thin film grown using energetic neutral atom-beam lithography/epitaxy molecular beam epitaxy. Cathodoluminescence and X-ray diffraction experiments are used to observe the existence of indium-rich domains in the sample. These domains give rise to a second carrier population and biexponential carrier cooling is observed with characteristic lifetimes of 1.6 and 14 ps at a carrier density of 1.3 x 10 16 cm(-3). A combination of band-filling, screening, and hot-phonon effects gives rise to a two-fold enhanced mono-exponential cooling rate of 28 ps at a carrier density of 8.4 x 10(18) cm(-3). This is the longest carrier thermalization time observed in bulk InGaN alloys to date. (C) 2016 AIP Publishing LLC.