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Journal Article

Electronic Properties of Si-H-x Vibrational Modes at Si Waveguide Interface

MPS-Authors
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Bashouti,  Muhammad Y.
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Yousefi,  Peyman
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Christiansen,  Silke H.
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Bashouti, M. Y., Yousefi, P., Ristein, J., & Christiansen, S. H. (2015). Electronic Properties of Si-H-x Vibrational Modes at Si Waveguide Interface. JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 6(19), 3988-3993. doi:10.1021/acs.jpclett.5b01918.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-6368-1
Abstract
Attenuated total reflectance (ATR) and X-ray photoelectron spectroscopy in suite with Kelvin probe were conjugated to explore the electronic properties of Si-H-x vibrational modes by developing Si waveguide with large dynamic detection range compared with conventional IR. The Si 2p emission and work-function related to the formation and elimination of Si-H-x bonds at Si surfaces are monitored based on the detection of vibrational mode frequencies. A transition between various Si-H-x bonds and thus related vibrational modes is monitored for which effective momentum transfer could be demonstrated. The combination of the aforementioned methods provides for results that permit a model for the kinetics of hydrogen termination of Si surfaces with time and advanced surface characterizing of hybrid-terminated semiconducting solids.